PART |
Description |
Maker |
AT-41410 |
Up to 6 GHz Low Noise Silicon Bipolar Transistor
|
Agilent (Hewlett-Packard) HP[Agilent(Hewlett-Packard)]
|
AT-41485 |
Up to 6 GHz Low Noise Silicon Bipolar Transistor
|
Agilent (Hewlett-Packard) HP[Agilent(Hewlett-Packard)]
|
AT-41535 AT-41535G |
Up to 6 GHz Low Noise Silicon Bipolar Transistor
|
AVAGO TECHNOLOGIES LIMITED
|
AT-41400 AT-41400-GP4 AT-41400-G |
Up to 6 GHz Low Noise Silicon Bipolar Transistor Chip
|
Agilent (Hewlett-Packard) HP[Agilent(Hewlett-Packard)]
|
BAT15-099 BAT1599 Q62702-A66 |
Silicon Dual Schottky Diode (DBS mixer application to 12 GHz Low noise figure Low barrier type) From old datasheet system
|
SIEMENS AG SIEMENS[Siemens Semiconductor Group]
|
INA-30311 INA-30311-BLK INA-30311-TR1 INA-30311- |
1 GHz Low Noise Silicon MMIC Amplifier GT 14C 14#16 SKT PLUG 1 GHz的硅单片低噪声放大器
|
Agilent (Hewlett-Packard) HP[Agilent(Hewlett-Packard)]
|
Q62702-F1129 BF998 |
Silicon N Channel MOSFET Tetrode (Short-channel transistor with high S/C quality factor For low-noise/ gain-controlled input stages up to 1 GHz) Isolation- UL94V-0 Package Material- Power Sharing on Output- Efficiency to 84% Silicon N Channel MOSFET Tetrode (Short-channel transistor with high S/C quality factor For low-noise, gain-controlled input stages up to 1 GHz)
|
SIEMENS AG Infineon SIEMENS[Siemens Semiconductor Group]
|
Q62702-F659 BFQ29 BFQ29P |
From old datasheet system NPN Silicon RF Transistor (For low-noise IF and broadband amplifiers up to 1 GHz at collector currents from 1 mA to 20 mA.)
|
SIEMENS[Siemens Semiconductor Group] SIEMENS AG
|
Q62702-F1587 BF1012W |
From old datasheet system SILICON N-CHANNEL MOSFET TETRODE (For low-noise, gain-controlled input stages up to 1 GHz)
|
SIEMENS[Siemens Semiconductor Group]
|
TMT-4-2002 |
Temperature Compensated Low Noise Amplifier 2 GHz - 4 GHz
|
TELEDYNE[Teledyne Technologies Incorporated]
|
TMT-4-0503 |
Temperature Compensated Low Noise Amplifier 0.5 GHz - 4 GHz
|
TELEDYNE[Teledyne Technologies Incorporated]
|